Two-step photoresist compositions and methods

ABSTRACT

The present disclosure relates to novel two-step photoresist compositions and processes. The processes involve removing acid-labile groups in step one and crosslinking the remaining material with themselves or added crosslinking systems in step two. The incorporation of a multistep pathway in the resist catalytic chain increases the chemical gradient in areas receiving a low dose of irradiation, effectively acting as a built in dose depend quencher-analog and thus enhancing chemical gradient and thus resolution. The photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays. Dual functionality photosensitive compositions and methods are also disclosed.

REFERENCE TO PRIOR FILED APPLICATIONS

This application is a divisional of, and claims the benefit of, U.S.patent application Ser. No. 14/187,649 filed Feb. 24, 2014 under 35U.S.C.§120.

FIELD OF INVENTION

The present invention relates to novel methanofullerene derivatives,negative-type photoresist compositions prepared therefrom and methods ofusing them. The invention further relates to 2-step resist processeswhich allow for improvements in contrast, resolution and/or line edgeroughness. The invention also relates to dual resist processes includingfullerenes and/or chemically amplified materials. The derivatives, theirphotoresist compositions and/or the methods are ideal for fine patternprocessing using, for example, ultraviolet radiation, extremeultraviolet radiation, beyond extreme ultraviolet radiation, X-rays andcharged particle rays.

BACKGROUND

As is well known, the manufacturing process of various kinds ofelectronic or semiconductor devices such as ICs, LSIs and the likeinvolves a fine patterning of a resist layer on the surface of asubstrate material such as a semiconductor silicon wafer. This finepatterning process has traditionally been conducted by thephotolithographic method in which the substrate surface is uniformlycoated with a positive or negative tone photoresist composition to forma thin layer of the photoresist composition and selectively irradiatingwith actinic rays (such as ultraviolet light) through a photomaskfollowed by a development treatment to selectively dissolve away thephotoresist layer in the areas exposed or unexposed, respectively, tothe actinic rays leaving a patterned resist layer on the substratesurface. The thus obtained patterned resist layer is utilized as a maskin the subsequent treatment on the substrate surface such as etching.The fabrication of structures with dimensions of the order of nanometersis an area of considerable interest since it enables the realization ofelectronic and optical devices which exploit novel phenomena such asquantum confinement effects and also allows greater component packingdensity. As a result, the resist layer is required to have an everincreasing fineness which can by accomplished only by using actinic rayshaving a shorter wavelength than the conventional ultraviolet light.Accordingly, it is now the case that, in place of the conventionalultraviolet light, electron beams (e-beams), excimer laser beams, EUV,BEUV and X-rays are used as the short wavelength actinic rays. Needlessto say the minimum size obtainable is primarily determined by theperformance of the resist material and the wavelength of the actinicrays. Various materials have been proposed as suitable resist materials.In the case of negative tone resists based on polymer crosslinking,there is an inherent resolution limit of about 10 nm, which is theapproximate radius of a single polymer molecule.

It is also known to apply a technique called “chemical amplification” tothe polymeric resist materials. A chemically amplified resist materialis generally a multi-component formulation in which there is a mainpolymeric component, such as a novolac resin which contributes towardsproperties such as resistance of the material to etching and itsmechanical stability and one or more additional components which impartdesired properties to the resist and a sensitizer. By definition, thechemical amplification occurs through a catalytic process involving thesensitizer which results in a single irradiation event causing exposureof multiple resist molecules. In a typical example the resist comprisesa polymer and a photoacid generator (PAG) as sensitizer. The PAGreleases a proton in the presence of radiation (light or e-beam). Thisproton then reacts with the polymer to cause it to lose a functionalgroup. In the process, a second proton is generated which can then reactwith a further molecule. The speed of the reaction can be controlled,for example, by heating the resist film to drive the reaction. Afterheating, the reacted polymer molecules are free to react with remainingcomponents of the formulation, as would be suitable for a negative-toneresist. In this way the sensitivity of the material to actinic radiationis greatly increased, as small numbers of irradiation events give riseto a large number of exposure events.

In such chemical amplification schemes, irradiation results incross-linking of the exposed resist material; thereby creating anegative tone resist. The polymeric resist material may be selfcross-linking or a cross linking molecule may be included. Chemicalamplification of polymeric-based resists is disclosed in U.S. Pat. Nos.5,968,712, 5,529,885, 5,981,139 and 6,607,870.

Various methanofullerene derivatives have been shown to be useful e-beamresist materials by the present inventors, Appl. Phys. Lett. Volume 72,page 1302 (1998), Appl. Phys. Lett. Volume 312, page 469 (1999), Mat.Res. Soc. Symp. Proc. volume 546, page 219 (1999) and U.S. Pat. No.6,117,617.

As can be seen there is an ongoing desire to obtain finer and finerresolution of photoresists that will allow for the manufacture ofsmaller and smaller semiconductor devices in order to meet therequirements of current and further needs. It is also desirable tocreate materials which can be used in conjunction with thesephotoresists which will be more robust to the processes used to createcurrent semiconductor devices, such as, for example, etching resistance.

DESCRIPTION OF THE FIGURES

FIG. 1: shows an SEM showing the resolution obtained from example 1.

FIG. 2: shows an SEM showing the resolution obtained from example 2.

FIG. 3: shows an SEM showing the resolution obtained from example 3.

FIG. 4: shows an SEM showing the resolution obtained from example 4.

FIG. 5: shows an SEM showing the resolution obtained from example 5.

FIG. 6: shows an SEM showing the resolution obtained from example 6.

FIG. 7: shows an SEM showing the resolution obtained from example 7.

FIG. 8: shows an SEM showing the resolution obtained from example 8.

FIG. 9: shows an SEM showing the resolution obtained from example 9.

FIG. 10: shows an SEM showing the resolution obtained from example 10.

SUMMARY OF THE DISCLOSURE

In a first embodiment, a methanofullerene comprising the generalformula:

is disclosed wherein C2x represents a fullerene with x at least 10, y is1-6, n is 0-1, alkyl is a branched or unbranched, substituted orunsubstituted divalent alkyl chain of 1-16 carbons with or without oneor more heteroatoms substituted into the chain, aryl is a substituted orunsubstituted divalent phenyl group, heteroaromatic group, or fusedaromatic or fused heteroaromatic group, and R is H or an acid labilegroup. An example of a disclosed methanofullerene comprises the generalformula:

In a second embodiment, the methanofullerene of the above embodimentincludes divalent alkyl groups comprising a substituted or unsubstitutedmethylene, ethylene or 1,3-propylene group, and the divalent aryl groupcomprises a substituted or unsubstituted phenylene group.

In a third embodiment, the methanofullerene of all the above embodimentsincludes R as either H or an acid labile alkoxycarbonyl group.

In a fourth embodiment, the methanofullerene of the above embodimentsincludes divalent alkyl group wherein the heteroatoms are one or more ofoxygen, nitrogen, sulfur, or oxides of sulfur and/or the alkyl chainsmay be substituted with fluorine atoms.

In a fifth embodiment, a negative-tone photoresist composition isdisclosed comprising at least one of any of the methanofullerenes of theabove embodiments, at least one photo acid generator, at least onecrosslinker, and at least one solvent, wherein the crosslinkercrosslinks at least with the methanofullerene when processed.

In a sixth embodiment, the negative-tone photoresist composition of theabove embodiments is disclosed wherein the at least one photoacidgenerator comprises an onium salt compound, a sulfone imide compound, ahalogen-containing compound, a sulfone compound, a sulfonate estercompound, a quinone-diazide compound, or a diazomethane compound.

In a seventh embodiment, the negative-tone photoresist composition ofany of the above embodiments is disclosed wherein the at least onecrosslinker comprises an acid sensitive monomer or polymer.

In an eighth embodiment, the negative-tone photoresist composition ofany of the above embodiments is disclosed wherein at least onemethanofullerene comprising the general formula is also included:

wherein x is at least 10, y is 1-6, a is 1-10 and R is H or an acidlabile group and the —CH₂—CH₂— group may be substituted with fluorineatoms. An example of a disclosed methanofullerene comprises the generalformula:

In other embodiments, the above methanofullerenes contain only partiallyblocked hydroxy groups. In these cases the R groups of the abovestructures are different and one of the R groups in the molecule is an Hwhile the other R group in the molecule is an acid labile group, asdescribed above. To obtain these molecules, the acid labile group isonly partially hydrolyzed. The amount of H groups in these hybridmethanofullerenes ranges between about 1% and about 90%.

In a further embodiment, a process for using any of the above mentionednegative-tone compositions is disclosed including the steps of obtaininga substrate, applying any one of the photoresist compositions of theabove embodiments to a desired wet thickness, optionally heating thecoated substrate to remove a majority of the solvent to obtain a desiredthickness, imagewise exposing the coating to actinic radiation, removingthe unexposed areas of the coating, and optionally heating the remainingcoating.

In still a further embodiment, the process of the above embodiment isdisclosed including a further step of either heating the imagewiseexposed coating prior to removing the unexposed areas of the coating orexposing the coating to infrared exposure.

In still a further embodiment, the process of the above embodiment isdisclosed wherein the unexposed areas are removed by treating with anorganic solvent composition.

In still a further embodiment, the process of the above embodiment isdisclosed wherein the actinic radiation is ultraviolet, extremeultraviolet, beyond extreme ultraviolet, charged particle beam orelectron beam.

In all the above embodiments, the fullerene may be substituted with morethan one type of methanofullerene.

In still further embodiments, disclosed and claimed herein are negativeworking photosensitive compositions which contain crosslinkablematerials which are protected by acid labile protecting groups.

In still a further embodiment are compositions and method for two-stepphotoresist processes using negative working photosensitive compositionsthat contain crosslinkable materials which are protected by acid labileprotecting groups. Such crosslinkable materials include monomers,oligomers and polymers, wherein acid generated from the acid generatorremoves the acid-labile group from the polymer, oligomer or monomer in afirst step, followed by crosslinking the crosslinkable polymer, oligomeror monomer alone or with additional crosslinking systems included in thecomposition in a second step. In still a further embodiment arecompositions and methods for two-step photoresist processes where acidgenerated from the acid generator removes the acid-labile group from thepolymer, oligomer or monomer, and protected fullerene, if present, in afirst step, followed by crosslinking with itself or a deprotectedpolymer, oligomer or monomer, if present, and with additionalcrosslinking systems, if present, in the composition in a second step.

In another embodiment is a dual photoresist process using the abovecompositions wherein the resist is exposed and the exposed areas areremoved using a suitable developer. The remaining material is againexposed and heated and the unexposed areas are removed using a suitabledeveloper.

DETAILED DESCRIPTION

As used herein, the conjunction “and” is intended to be inclusive andthe conjunction “or” is not intended to be exclusive unless otherwiseindicated. For example, the phrase “or, alternatively” is intended to beexclusive.

As used herein, the terms “having”, “containing”, “including”,“comprising” and the like are open ended terms that indicate thepresence of stated elements or features, but do not preclude additionalelements or features. The articles “a”, “an” and “the” are intended toinclude the plural as well as the singular, unless the context clearlyindicates otherwise.

As used herein, the terms “dry”, “dried” and “dried coating” meanshaving less than 8% residual solvent.

The methanofullerene of the current application for patent is of generalformulation:

x is at least 10, such as, for example, 10, 25, 30, 35, 38, 39, 41, 42,45 and 48 wherein the example fullerene core is C₂₀, C₅₀, C₆₀, C₇₀, C₇₆,C₇₈, C₈₂, C₈₄, C₉₀ and C₉₆. y is between about 1 to about 6 representingthe number of methano substituents on the fullerene. As is well known inthe industry, manufacture of such materials often results in mixtures ofthe number of substitutions such that a useful material may have, forexample, y=2.35 or 5.1 representing an average of a mixture ofsubstitutions. Thus y is not meant to be an absolute number ofsubstituents but an average thereof. An example of a disclosedmethanofullerene comprises the general formula:

The alkyl group can be a branched or unbranched divalent alkyl chain of1-16 carbons with or without heteroatoms substituted into the chain,such as, for example, —CH₂—, —CH₂CH₂—, —CH(CH₃)CH₂—, —CH₂CH₂CH₂—,—CH₂CH₂CH₂CH₂—, butylene isomers, and the higher analogs up to andincluding hexadecylene, as well as their isomers. As used herein alkylalso includes any unsaturations in the chain such an olefin group, suchas for example, —CH═CH—, or an alkynyl group. As mentioned the alkylgroup may have heteroatoms substituted into the chain as part or thechain, such as O, N, S, S═O or SO₂ and the like, such as, for example,—(CH₂CH₂—O)_(z)— wherein z is between about 1 and about 16, or—(CH₂CH₂NH)_(w)— wherein w is between about 1 and about 16, and thelike. Also included are branched alkyl groups that contain heteroatomsin the ring, such as, for example —(CH₂CH₂NR″)_(v)— wherein R″ can be abranched or unbranched divalent alkyl chain of 1-16 carbons with orwithout heteroatoms substituted into the R″ chain.

Aryl is a substituted or unsubstituted divalent aromatic group, sucharomatic groups include, for example the phenylenes (—C₆H₄—), the fuseddivalent aromatic group, such as, for example, the naphthylenes(—C₁₀H₆—), the anthacenylenes (—C₁₄H₈—) and the like, as well as theheteroaromatic groups, such as, for example, the nitrogen heterocycles:pyridines, quinolines, pyrroles, indoles, pyrazoles, the triazines, andother nitrogen-containing aromatic heterocycles well known in the arts,as well as the oxygen heterocycles: furans, oxazoles and otheroxygen-containing aromatic heterocycles, as well the sulfur containingaromatic heterocycles, such as, for example, thiophenes.

R may be H or D or an acid labile group, including, for example,substituted methyl groups, 1-substituted ethyl groups, 1-substitutedalkyl groups, silyl groups, germyl groups, alkoxycarbonyl group, acylgroups and cyclic acid-dissociable groups. The substituted methyl groupsinclude, for example, the methoxymethyl group, methylthiomethyl group,ethoxy methyl group, ethylthiomethyl group, methoxyethoxy methyl group,benzyloxymethyl group, benzylthiomethyl group, phenacyl group,bromophenacyl group, methoxyphenacyl group, methylthiophenacyl group,α-methylphenacyl group, cyclopropylmethyl group, benzyl group, diphenylmethyl group, triphenylmethyl group, bromobenzyl group, nitrobenzylgroup, methoxybenzyl group, methylthiobenzyl group, ethoxy benzyl group,ethylthiobenzyl group, piperonyl group, methoxycarbonylmethyl group,ethoxy carbonylmethyl group, N-propoxy carbonylmethyl group, isopropoxycarbonylmethyl group, N-butoxycarbonylmethyl group andt-butoxycarbonylmethyl group. The 1-substituted ethyl groups include,for example. 1-methoxyethyl group, 1-methylthioethyl group,1,1-dimethoxyethyl group, 1-ethoxy ethyl group, 1-ethylthioethyl group,1,1-diethoxy ethyl group, 1-phenoxyethyl group, 1-phenylthioethyl group,1,1-diphenoxyethyl group, 1-benzyloxyethyl group, 1-benzylthioethylgroup, 1-cyclopropylethyl group, 1-phenylethyl group, 1,1-diphenyl ethylgroup, 1-methoxycarbonylethyl group, 1-ethoxy carbonylethyl group,1-N-propoxy carbonylethyl group, 1-isopropoxy carbonylethyl group,1-N-butoxycarbonylethyl group and the 1-t-butoxycarbonylethyl group. The1-substituted alkyl group include the isopropyl group, sec-butyl group,t-butyl group, 1,1-dimethylpropyl group, 1-methylbutyl group and1,1-dimethylbutyl group.

The silyl acid labile groups include, for example, the trimethyl silylgroup, ethyldimethylsilyl group, methyldiethylsilyl group, triethylsilylgroup, isopropyldimethylsilyl group, methyldiisopropylsilyl group,triisopropylsilyl group, t-butyldimethylsilyl group,methyldi-t-butylsilyl group, tri-t-butylsilyl group, phenyldimethylsilylgroup, methyldiphenyl silyl group and triphenylsilyl group. The germylgroups include, for example, the trimethyl germyl group,ethyldimethylgermyl group, methyldiethylgermyl group, triethylgermylgroup, isopropyldimethylgermyl group, methyldiisopropylgermyl group,triisopropylgermyl group, t-butyldimethylgermyl group,methyldi-t-butylgermyl group, tri-t-butylgermyl group,phenyldimethylgermyl group, methyldiphenyl germyl group andtriphenylgermyl group.

The alkoxycarbonyl acid labile groups include the methoxycarbonyl group,ethoxy carbonyl group, isopropoxy carbonyl group and t-butoxycarbonylgroup. The acyl acid labile groups include, for example, the acetylgroup, propionyl group, butyryl group, heptanoyl group, hexanoyl group,valeryl group, pivaloyl group, isovaleryl group, lauroyl group,myristoyl group, palmitoyl group, stearoyl group, oxaryl group, malonylgroup, succinyl group, glutaryl group, adipoyl group, piperoyl group,suberoyl group, azelaoyl group, sebacoyl group, acrylyl group,propioloyl group, methacryloyl group, crotonoyl group, oleoyl group,maleoyl group, fumaroyl group, mesaconoyl group, camphoroyl group,benzoyl group, phthaloyl group, isophthaloyl group, terephthaloyl group,naphthoyl group, toluoyl group, hydroatropoyl group, atropoyl group,cinnamoyl group, furoyl group, thenoyl group, nicotinoyl group,isonicotinoyl group, p-toluene sulfonyl group and the mesyl group.

Cyclic acid groups include, for example, the cyclopropyl group,cyclopentyl group, cyclohexyl group, cyclohexanyl group,4-methoxycyclohexyl group, tetrahydropyranyl group, tetrahydrofuranylgroup, tetrahydrothiopyranyl group, tetrahydrothiofuranyl group, 3-bromotetrahydropyranyl group, 4-methoxy tetrahydropyranyl group, 4-methoxytetrahydrothiopyranyl group and 3-tetrahydrothiophene-1,1-dioxy group.

In the above structure n may be 0 or 1. In the case where n=1, themethanofullerene contains a benzyl alcohol which will crosslink with thecrosslinking systems when processed. Additionally, in a furtherembodiment, when the benzyl alcohol is protected with the acid labilegroups of the current disclosure, a reactive benzyl alcohol will beobtained when deprotected and, as above, will crosslink with thecrosslinking systems when processed.

The fullerenes may also be substituted with other groups that introducecertain desired characteristics to the fullerene such as, for example,solubility in certain solvents or compatibility with certain componentsof the formulation. The fullerenes can be prepared by any of a number ofmethods, such as, for example, the procedure as shown in the examplesbelow.

The photo acid generators (PAGs) suitable for the negative-tonephotoresist of the current disclosure include onium salt compounds,sulfone imide compounds, halogen-containing compounds, sulfonecompounds, ester sulfonate compounds, quinone diazide compounds, anddiazomethane compounds. Specific examples of these acid generators areindicated below.

Examples of onium salt compounds include sulfonium salts, iodoniumsalts, phosphonium salts, diazonium salts and pyridinium salts. Specificexamples of onium salt compounds includediphenyl(4-phenylthiophenyl)sulphonium hexafluoroantimonate,4,4′-bis[diphenylsulfoniolphenylsulphide bis hexafluoroantimonate andcombinations there of, triphenylsulfonium nonafluorobutanesulfonate,triphenylsulfonium trifluoromethanesulfonate, triphenylsulfoniumpyrenesulfonate, triphenylsulfonium dodecylbenzenesulfonate,triphenylsulfonium p-toluene sulfonate, triphenylsulfoniumbenzenesulfonate, triphenylsulfonium 10-camphor-sulfonate,triphenylsulfonium octanesulfonate, triphenylsulfonium 2-trifluoromethylbenzenesulfonate, triphenylsulfonium hexafluoroantimonate,triarylsulfonium hexafluoroantimonates, the triarylsulfoniumhexafluorophosphates, the triarylsulfonium tetrafluoroborates as well asother tetrafluoroborates, triphenylsulfonium napthalenesulfonate,tri(4-hydroxyphenyl)sulfonium nonafluorobutanesulfonate,tri(4-hydroxyphenyl)sulfoniumtrifluoromethanesulfonate,tri(4-hydroxyphenyl)sulfonium pyrenesulfonate,tri(4-hydroxyphenyl)sulfoniumdodecylbenzenesulfonate,tri(4-hydroxyphenyl)sulfonium p-toluene sulfonate,tri(4-hydroxyphenyl)sulfonium benzenesulfonate,tri(4-hydroxyphenyl)sulfonium10-camphor-sulfonate,tri(4-hydroxyphenyl)sulfonium octanesulfonate,tri(4-hydroxyphenyl)sulfonium 2-trifluoromethylbenzenesulfonate,tri(4-hydroxyphenyl)sulfonium hexafluoroantimonate,tri(4-hydroxyphenyl)sulfonium napthalenesulfonate, diphenyliodoniumnonafluorobutanesulfonate, diphenyliodonium trifluoromethanesulfonate,diphenyliodonium pyrenesulfonate, diphenyliodoniumdodecylbenzenesulfonate, diphenyliodonium p-toluene sulfonate,diphenyliodonium benzenesulfonate, diphenyliodonium10-camphor-sulfonate, diphenyliodonium octanesulfonate, diphenyliodonium2-trifluoromethylbenzenesulfonate, bis(4-t-butylphenyl)iodoniumnonafluorobutanesulfonate, bis(4-t-butylphenyl)iodoniumtrifluoromethanesulfonate, bis(4-t-butylphenyl)iodonium pyrenesulfonate,bis(4-t-butylphenyl)iodonium dodecylbenzenesulfonate,bis(4-t-butylphenyl)iodonium p-toluene sulfonate,bis(4-t-butylphenyl)iodonium benzenesulfonate,bis(4-t-butylphenyl)iodonium 10-camphor-sulfonate,bis(4-t-butylphenyl)iodonium octanesulfonate,bis(4-t-butylphenyl)iodonium 2-trifluoromethylbenzenesulfonate,4-hydroxy-1-naphthyl tetrahydrothiophenium trifluoromethanesulfonate and4,7-dihydroxy-1-naphthyl tetrahydrothiopheniumtrifluoromethanesulfonate.

Specific examples of a sulfone imide compound includeN-(trifluoromethylsulfonyloxy)succinimide,N-(trifluoromethylsulfonyloxy)phthalimide,N-(trifluoromethylsulfonyloxy)diphenylmaleimide,N-(trifluoromethylsulfonyloxy)bicyclo[2.2.1]hepto-5-ene-2,3-dicarboxyimide,N-(trifluoromethylsulfonyloxy)-7-oxabicyclo[2.2.1]hepto-5-ene-2,3-dicarboxyimide,N-(trifluoromethylsulfonyloxy)bicyclo[2.2.1]heptane-5,6-oxy-2,3-dicarboxyimide,N-(trifluoromethylsulfonyloxy)naphthylimide,N-(10-camphor-sulfonyloxy)succinimide,N-(10-camphor-sulfonyloxy)phthalimide,N-(10-camphor-sulfonyloxy)diphenyl maleimide,N-(10-camphor-sulfonyloxy)bicyclo[2.2.1]hepto-5-ene-2,3-dicarboxyimide,N-(10-camphor-sulfonyloxy)-7-oxabicyclo[2.2.1]hepto-5-ene-2,3-dicarboxyimide,N-(10-camphor-sulfonyloxy)bicyclo[2.2.1]heptane-5,6-oxy-2,3-dicarboxyimide,N-(10-camphor-sulfonyloxy)naphthylimide, N-(p-toluenesulfonyloxy)succinimide, N-(p-toluene sulfonyloxy)phthalimide,N-(p-toluene sulfonyloxy)diphenyl maleimide, N-(p-toluenesulfonyloxy)bicyclo[2.2.1]hepto-5-ene-2,3-dicarboxyimide, N-(p-toluenesulfonyloxy)-7-oxabicyclo[2.2.1]hepto-5-ene-2,3-dicarboxyimide,N-(p-toluenesulfonyloxy)bicyclo[2.2.1]heptane-5,6-oxy-2,3-dicarboxyimide,N-(p-toluene sulfonyloxy)naphthylimide,N-(2-trifluoromethylbenzenesulfonyloxy)succinimide,N-(2-trifluoromethylbenzenesulfonyloxyl)phthalimide,N-(2-trifluoromethylbenzenesulfonyloxyl)diphenyl maleimide,N-(2-trifluoromethylbenzenesulfonyloxyl)bicyclo[2.2.1]hepto-5-ene-2,3-dicarboxyimide,N-(2-trifluoromethylbenzenesulfonyloxy)-7-oxabicyclo[2.2.1]hepto-5-ene-2,3-dicarboxyimide,N-(2-trifluoromethylbenzenesulfonyloxy)bicyclo[2.2.1]heptane-5,6-oxy-2,3-dicarboxyimide,N-(2-trifluoromethylbenzenesulfonyloxy)naphthylimide,N-(4-fluorobenzenesulfonyloxy)succinimide,N-(4-fluorobenzenesulfonyloxyl)phthalimide,N-(4-fluorobenzenesulfonyloxyl)diphenyl maleimide,N-(4-fluorobenzenesulfonyloxyl)bicyclo[2.2.1]hepto-5-ene-2,3-dicarboxyimide,N-(4-fluorobenzenesulfonyloxy)-7-oxabicyclo[2.2.1]hepto-5-ene-2,3-dicarboxyimide,N-(4-fluorobenzenesulfonyloxy)bicyclo[2.2.1]heptane-5,6-oxy-2,3-dicarboxyimide,N-(4-fluorobenzenesulfonyloxyl)naphthylimide,N-(nonafluorobutylsulfonyloxy)succinimide,N-(nonafluorobutylsulfonyloxy)phthalimide,N-(nonafluorobutylsulfonyloxy)diphenyl maleimide,N-(nonafluorobutylsulfonyloxy)bicyclo[2.2.1]hepto-5-ene-2,3-dicarboxyimide,N-(nonafluorobutylsulfonyloxy)-7-oxabicyclo[2.2.1]hepto-5-ene-2,3-dicarboxyimide,N-(nonafluorobutylsulfonyloxy)bicyclo[2.2.1]heptane-5,6-oxy-2,3-dicarboxyimideand N-(nonafluorobutylsulfonyloxy)naphthylimide.

Examples of halogen-containing compounds include, for example, haloalkylgroup-containing hydrocarbon compounds and haloalkyl group-containingheterocyclic compounds. Specific examples of halogen-containingcompounds include (poly)trichloromethyl-s-triadine derivatives such asphenyl-bis(trichloromethyl)-s-triadine,4-methoxyphenyl-bis(trichloromethyl)-s-triadine and1-naphthyl-bis(trichloromethyl)-s-triadine, and1,1-bis(4-chlorophenyl)-2,2,2-trichloroethane.

Examples of sulfone compounds include, for example, f3-ketosulfone andf3-sulfonylsulfone, and the α-diazo compounds thereof. Specific examplesof the sulfone compounds include phenacyl phenylsulfone, mesitylphenacylsulfone, bis(phenylsulfonyl)methane, 1,1-bis(phenylsulfonyl)cyclobutane,1,1-bis(phenylsulfonyl)cyclopentane, 1,1-bis(phenylsulfonyl)cyclohexane, and 4-trisphenacyl sulfone.

Examples of sulfonate ester compounds include alkylsulfonate esters,haloalkyl sulfonate esters, aryl sulfonate esters sand imino sulfonates.Specific examples of sulfonate ester compounds include benzoin tosylate,pyrogallol tristrifluoromethanesulfonate, pyrogalloltrisnonafluorobutanesulfonate, pyrogallol methanesulfonate triester,nitrobenzyl-9,10-diethoxy anthracene-2-sulfonate, α-methylol benzointosylate, α-methylol benzoin octanesulfonate, α-methylol benzointrifluoromethanesulfonate and α-methylol benzoin dodecylsulfonate.

Examples of quinine diazide compounds include compounds containing a1,2-quinone diazide sulfonyl group such as the 1,2-benzoquinonediazide-4-sulfonyl group, 1,2-naphthoquinone diazide-4-sulfonyl group,1,2-naphtho quinine diazide-5-sulfonyl group and 1,2-naphthoquinonediazide-6-sulfonyl group. Specific examples of quinone diazide compoundsinclude 1,2-quinone diazidesulfonate esters of (poly) hydroxyphenylarylketones such as 2,3,4-trihydroxybenzophenone,2,4,6-trihydroxybenzophenone, 2,3,4,4′-tetrahydroxybenzophenone,2,2′,3,4-tetrahydroxybenzophenone,3′-methoxy-2,3,4,4′-tetrahydroxybenzophenone,2,2′,4,4′-tetrahydroxybenzophenone, 2,2′3,4,4′-pentahydroxybenzophenone,2,2′3,4,6′-pentahydroxybenzophenone,2,3,3′4,4′,5′-hexahydroxybenzophenone,2,3′4,4′,5′,6-hexahydroxybenzophenone; 1,2-quinone diazide sulfonateesters of bis[(poly) hydroxyphenyl]alkanes such asbis(4-hydroxyphenyl)methane, bis(2,4-dihydroxyphenyl)methane,bis(2,3,4-trihydroxyphenyl)methane, 2,2-bis(4-hydroxyphenyl) propane,2,2-bis(2,4-dihydroxyphenyl) propane and 2,2-bis(2,3,4-trihydroxyphenyl)propane; 1,2-quinone diazide sulfonate esters of (poly)hydroxytriphenylalkanes such as 4,4′-dihydroxytriphenylmethane,4,4′,4″-trihydroxytriphenylmethane,2,2′,5,5′-tetramethyl-2″,4,4′-trihydroxytriphenylmethane,3,3′,5,5′-tetramethyl-2″,4,4′-trihydroxytriphenylmethane,4,4′,5,5′-tetramethyl-2,2′,2″-trihydroxytriphenylmethane,2,2′,5,5′-tetramethyl-4,4′,4″-trihydroxytriphenylmethane,1,1,1-tris(4-hydroxyphenyl) ethane,1,1-bis(4-hydroxyphenyl)-1-phenylethane,1,1-bis(4-hydroxyphenyl)-1-[4-{1-(4-hydroxyphenyl)-1-methylethyl}phenyl]ethane,1,1,3-tris(2,5-dimethyl-4-hydroxyphenyl) propane,1,1,3-tris(2,5-dimethyl-4-hydroxyphenyl) butane and1,3,3-tris(2,5-dimethyl-4-hydroxyphenyl) butane; and 1,2-quinone diazidesulfonate esters of (poly) hydroxyphenylflavans such as2,4,4-trimethyl-2′,4′,7-trihydroxy-2-phenylflavan and2,4,4-trimethyl-2′,4′,5′,6′,7-pentahydroxy-2-phenylflavan.

Specific examples of diazomethane compounds includebis(trifluoromethylsulfonyl)diazomethane,bis(cyclohexylsulfonyl)diazomethane, bis(phenylsulfonyl)diazomethane,bis(p-toluene sulfonyl)diazomethane, methylsulfonyl-p-toluenesulfonyldiazomethane,1-cyclohexylsulfonyl-1-(1,1-dimethylethylsulfonyl)diazomethane andbis(1,1-dimethylethylsulfonyl)diazomethane.

The compositions of the current disclosure may contain one or more ofthe above mentioned photoacid generators.

Crosslinking systems suitable for the current disclosure constitutecompounds able to crosslink with the methanofullerene during the processsuch that when the methanofullerene is substituted with a phenol orsimilar group, such as, for example, an alkyl —OH group, or when themethanofullerene is deprotected to provide for a phenol or similargroup, the crosslinking system will react with the —OH group situated onthe phenol or similar group. Not to be held to theory, it is believedthat the acid that is generated by exposure to the actinic radiation notonly reacts with the acid-labile group of the methanofullerene but aidsin the reaction of the crosslinking system with itself and with themethanofullerene. Examples of crosslinking systems include compoundscomprising at least one type of substituted group that possess acrosslinking reactivity with the phenol or similar group of themethanofullerene. Specific examples of this crosslinking systems includethe glycidyl ether group, glycidyl ester group, glycidyl amino group,methoxymethyl group, ethoxy methyl group, benzyloxymethyl group,dimethylamino methyl group, diethylamino methyl group, dimethylol aminomethyl group, diethylol amino methyl group, morpholino methyl group,acetoxymethyl group, benzyloxy methyl group, formyl group, acetyl group,vinyl group and isopropenyl group.

Examples of crosslinking systems having the aforementioned crosslinkingsubstituted group include, for example, bisphenol A-based epoxycompounds, bisphenol F-based epoxy compounds, bisphenol S-based epoxycompounds, novolac resin-based epoxy compound, resol resin-based epoxycompounds, poly (hydroxystyrene)-based epoxy compounds, methylolgroup-containing melamine compounds, methylol group-containingbenzoguanamine compounds, methylol group-containing urea compounds,methylol group-containing phenol compounds, alkoxyalkyl group-containingmelamine compounds, alkoxyalkyl group-containing benzoguanaminecompounds, alkoxyalkyl group-containing urea compounds, alkoxyalkylgroup-containing phenol compounds, carboxymethyl group-containingmelamine resins, carboxy methyl group-containing benzoguanamine resins,carboxymethyl group-containing urea resins, carboxymethylgroup-containing phenol resins, carboxymethyl group-containing melaminecompounds, carboxymethyl group-containing benzoguanamine compounds,carboxymethyl group-containing urea compounds, and carboxymethylgroup-containing phenol compounds, methylol group-containing phenolcompounds, methoxymethyl group-containing melamine compounds,methoxymethyl group-containing phenol compounds, methoxymethylgroup-containing glycol-uril compounds, methoxymethyl group-containingurea compounds and acetoxymethyl group-containing phenol compounds. Themethoxymethyl group-containing melamine compounds are commerciallyavailable as, for example, CYMEL300, CYMEL301, CYMEL303, CYMEL305(manufactured by Mitsui Cyanamid), the methoxymethyl group-containingglycol-uril compounds are commercially available as, for example,CYMEL117 4 (manufactured by Mitsui Cyanamid), and the methoxymethylgroup-containing urea compounds are commercially available as, forexample, MX290 (manufactured by Sanwa Chemicals).

Examples of suitable solvents for the current disclosure include ethers,esters, etheresters, ketones and ketoneesters and, more specifically,ethylene glycol monoalkyl ethers, diethylene glycol dialkyl ethers,propylene glycol monoalkyl ethers, propylene glycol dialkyl ethers,acetate esters, hydroxyacetate esters, lactate esters, ethylene glycolmonoalkylether acetates, propylene glycol monoalkylether acetates,alkoxyacetate esters, (non-)cyclic ketones, acetoacetate esters,pyruvate esters and propionate esters. Specific examples of thesesolvents include ethylene glycol monomethyl ether, ethylene glycolmonoethyl ether, ethylene glycol monopropyl ether, ethylene glycolmonobutyl ether, diethylene glycol dimethyl ether, diethylene glycoldiethyl ether, diethylene glycol dipropyl ether, diethylene glycoldibutyl ether, methylcellosolve acetate, ethyl cellosolve acetate,propylene glycol monomethyletheracetate, propylene glycolmonoethyletheracetate, propylene glycol monopropyletheracetate,isopropenyl acetate, isopropenyl propionate, methylethyl ketone,cyclohexanone, 2-heptanone, 3-heptanone, 4-heptanone,2-hydroxypropionate ethyl, 2-hydroxy-2-methylpropionate ethyl, ethoxyacetate ethyl, hydroxyacetate ethyl, 2-hydroxy-3-methyl methylbutyrate,3-methoxybutylacetate, 3-methyl-3-methoxybutylacetate,3-methyl-3-methoxybutyl propionate, 3-methyl-3-methoxybutyl butylate,ethyl acetate, propyl acetate, butyl acetate, methyl acetoacetate, ethylacetoacetate, methyl 3-methoxypropionate, ethyl 3-methoxy propionate,3-ethoxy propionate methyl and 3-ethoxy propionate ethyl. Theaforementioned solvents may be used independently or as a mixture of twoor more types. Furthermore, at least one type of high boiling pointsolvent such as benzylethyl ether, dihexyl ether, diethylene glycolmonomethyl ether, diethylene glycol monoethyl ether, acetonylacetone,isoholon, caproic acid, capric acid, 1-octanol, 1-nonanol, benzylalcohol, benzyl acetate, ethyl benzoate, diethyl oxalate, diethylmaleate, γ-butyrolactone, ethylene carbonate, propylene carbonate andphenylcellosolve acetate may be added to the aforementioned solvent.

Various additives may be added to the photoresist formulations toprovide certain desirable characteristic of the photoresist such as, forexample, acid diffusion control agents to retard acid from migratinginto unexposed areas of the coating, surfactants to improve coating ofsubstrates, adhesion promoters to improve adhesion of the coating to thesubstrate and sensitizers to improve the photosensitivity of thephotoresist coating during photoexposure, and antifoaming agents and airrelease agents, as well as other materials well know in the coatingsindustry.

In other embodiments other methanofullerenes are added to providevarious desired properties such as improved sensitivity to the actinicradiation or for improvements in line edge roughness. Examples of suchmethanofullerenes include:

wherein x, y and R are described about and R can include a carboxylicacid derivative which together with the —(CH₂CH₂—O)_(a) provides for acarboxylic ester structure. The —(CH₂CH₂—O) group may be substitutedwith fluorine atoms. A can be from about 1 to about 10. An more specificexample of a disclosed methanofullerene comprises the general formula:

The components of the compositions of the current disclosure areincluded in ranges as follows based on weight/weight: methanofullerenesfrom about 1% to about 65%, crosslinking systems from about 10% to about80%, photoacid generator from about 0.5% to about 50%. The percentsolids of the composition may range from about 0.001%-about 25%.

In other embodiments, the above methanofullerenes contain only partiallyblocked hydroxy groups. In these cases the R groups of the abovestructures are different and one of the R groups in the molecule is an Hwhile the other R group in the molecule is an acid labile group, asdescribed above. To obtain these molecules, the acid labile group isonly partially hydrolyzed. The amount of H groups in these hybridmethanofullerenes ranges between about 1% and about 90%.

The photoresist compositions can be coated onto substrate such as asilicon wafer or a wafer coated with silicon dioxide, aluminium,aluminum oxide, copper, nickel, any of a number of semiconductormaterials or nitrides or other substrates well known the semiconductorindustry, or a substrate having thereon an organic film, such as, forexample, a bottom layer anti-reflective film or the like. Thephotoresist compositions are applied by such processes as spin coating,curtain coating, slot coating, dip coating, roller coating, bladecoating and the like. After coating, the solvent is removed to a levelwherein the coating can be properly exposed. In some cases a residual of5% solvent may remain in the coating while in other cases less than 1%is required. Drying can be accomplished by hot plate heating, convectionheating, infrared heating and the like. The coating is imagewise exposedthrough a mark containing a desired pattern.

Radiation suitable for the described photoresist compositions include,for example, ultraviolet rays (UV), such as the bright line spectrum ofa mercury lamp (254 nm), a KrF excimer laser (248 nm), and an ArFexcimer laser (193 nm), extreme ultraviolet (EUV) such as 13.5 nm fromplasma discharge and synchrotron light sources, beyond extremeultraviolet (BEUV) such as 6.7 nm exposure, X-ray such as synchrotronradiation. Ion beam lithography and charged particle rays such aselectron beams may also be used.

Following exposure, the exposed coated substrate may optionally be postexposure baked to enhance the reaction of the photoacid generator, suchas, for example, heating from about 30 to about 200° C. for about 10 toabout 600 seconds. This may be accomplished by hot plate heating,convection heating, infrared heating and the like. The heating may alsobe performed by a laser heating processes such as, for example, a CO₂laser pulse heating for about 2 to about 5 milliseconds. Both heatingprocesses may be combined in tandem.

A flood exposure process may be applied after the pattern exposure toaid in further cure. Results have indicated that flood exposure reducesor eliminates pattern collapse after development of the negative-toneresists as well as reduction in line edge roughness. For example, a 532nm continuous wave laser exposes the previously exposed resist for 1-2sec followed by wet development. The flood process may or may not befollowed by a heating step.

The unexposed areas are next moved using a developer. Such developersinclude organic solvents as well as aqueous solution such as aqueousalkali solution. When an organic solvent is used to remove the unexposedareas generally the solvent is less aggressive than the solvent that wasused in preparing the photoresist composition. Examples of aqueousalkali development solution include, for example, at least one type ofalkaline compound such alkali metal hydroxides, ammonia water,alkylamines, alkanolamines, heterocyclicamines, tetraalkyl ammoniumhydroxides, cholines, and1,8-diazabicyclo[5.4.0]-7-undecan,1,5-diazabicyclo[4.3.0]-5-nonene at aconcentration of about 1 to about 10% by weight, such as, for example,about 2 to about 5% by weight. Water-soluble organic solvents such asmethanol and ethanol and surfactants may also be added in suitableamounts to the alkaline aqueous solution, depending on the desireddevelopment characteristics and process parameters.

After development a final baking step may be included to further enhancethe curing of the now exposed and developed pattern. The heating processmay be, for example, from about 30 to about 600° C. for about 10 toabout 120 seconds and may be accomplished by hot plate heating,convection heating, infrared heating and the like.

Negative working photosensitive compositions of the current disclosurecontain crosslinkable material which are protected by acid labileprotecting groups. Such crosslinkable materials include monomer,oligomer and polymers. Such polymers include, for example, phenolicresins, cresol-formaldehyde resins, carboxylic acid containing resins,and hydroxy group containing resins. The reactive portions of theseresins are protected by the acid labile protecting groups that arelisted above. The compositions contain photoacid generators, as listedabove, the protected crosslinkable materials and other materials, suchas crosslinking systems, which crosslink with the crosslinkablematerials when the reactive portions of the crosslinkable materials aredeprotected. Other materials may also be present in the compositionwhich are generally present in photosensitive coatings, such as, forexample, wetting agents, leveling agents, colorants, photosensitizingagents, and the like. Thus the components of the composition are admixedin a solvent and coated onto a substrate and dried to a suitabledryness. The coating is exposed to actinic radiation to convert aportion of the photoacid generator to acid and the acid reacts todeprotect the protected crosslinkable materials. The crosslinkablematerials, by themselves or with the aid of the photogenerated acid,crosslinks with itself or crosslinking systems, if present in thecomposition. The unexposed areas can now be removed with a developerleaving behind an image.

For example, poly(4-tert-butoxycarbonyloxystyrene) (PBOCST), is apolymer protected by an acid-labile group, such as those describedabove, which becomes a material capable of crosslinking when acid froman acid generator is generated, either by photolytic or thermal means,and the polymer is deprotected to give poly(4-hydroxystyrene) PHOST.Other crosslinking systems, such as those mentioned above, for example,hexamethoxymethylmelamine (HMMM) crosslinker systems, poly[(o-cresylglycidyl ether)-co-formaldehyde] and the like, may be included which canthen crosslink with the deprotected polymers, oligomers or monomers,such as the PHOST already mentioned. In this method, therefore, the acidis generated, deprotects the protected polymer, either at ambienttemperature or with a thermal assistance step, the now deprotectedpolymer either crosslinks with itself or with an included crosslinkingsystem, again at ambient temperature or with a thermal assist step. Theacid that is generated may also assist the crosslinking of thedeprotected polymer, oligomer and/or monomer with the crosslinkingsystem. The area in which no acid has been purposely generated thuscontains little or no crosslinked materials and can be dissolved awaywith an appropriate developer such as those described above. Thisphotoresist process can be termed a “2-step”; the first step beingremoval of the protecting group by acid which has been generated, andthe second step being crosslinking of the deprotected polymer withitself and/or with an included crosslinking system to give a compositionthat is substantially resistant to a developer material. While not beingheld to theory, it is believed that the crosslinking systems may startto crosslink with themselves once the PAG creates an acid, thus startingthe curing process.

It has also been found that inclusion of the protected materials, thosepolymers, oligomers, or monomers protected by acid-labile protectinggroups as described above, as well as the crosslinkable systemsdescribed above, into the photoresist compositions herein disclosed,enhances the contrast, resolution and/or line edge roughness of thephotoimage created. Again not to be held to theory it is believed thatin photoacid generation systems, such as those described above,generated acids may migrate to areas which have not been exposed toactinic radiation. Additionally stray actinic radiation may expose areaswhich are not desired to be exposed. In both cases the acid can causecrosslinking to initiate and may cause photoproducts that have lowsolubility in developer, causing the undesirable effects of lowcontrast, low resolution and/or high line edge roughness. Acid generatedin undesirable areas may be captured by the protected materials. Thus,including acid labile materials in the resist compositions act as “acidscavengers” and aid in preventing undesired, developer resistantmaterials. Typical “acid scavengers” are nitrogen based materials whichcan reduce the amount of useful acid in the desired exposure regionsthus reducing photospeed. The current system utilized the uniquebehaviour of the protected materials to act as acid scavengers; the samematerials act as acid scavenging as it does for photocuring. Thus theacid scavenging mechanism is a non-competing reaction.

The photoresists described above also have utility as “dual” resists. Acoated and dried resist composition of the current disclosure ispattern-wise exposed to actinic radiation, such as UV, DUV, EUV, e-Beamand the like. The acid which is generated deprotects the materialprotected by an acid-labile group which then can become soluble in adeveloper. For example if the acid-labile group protects a phenolicmaterial, such as PHOST, the deprotected material can be soluble inaqueous base developers, either alone or with additional ingredients,such as, for example, surfactants, emulsifying materials or a solventadded to aid in development. Thus the areas that were exposed to actinicradiation are removed and a positive image results. The resulting image,or pattern, which has not been exposed, may now be again pattern-wiseexposed to actinic radiation such as, for example, UV, DUV, EUV, e-Beamand the like. The image or pattern is now heated to cause crosslinking.The unexposed areas are now removed with a suitable developer to leavebehind an image. Thus the areas that were not exposed to actinicradiation are removed resulting in a negative image. It can be seen thatthe versatility of the resists in this disclosure allow for applicationswhich are not suitable for single purpose resists.

EXAMPLES Synthesis Example A Methanofullerene I:[3-(4-t-butoxycarbonyl)phenyl-1-propyl malonate]-methano-[60]fullerene

Synthesis of 3-(4-t-butoxycarbonyl)phenyl-1-propanol (1)

To a 250 mL round bottom flask was added 3-(4-hydroxyphenyl)-1-propanol(10 g, 65.7 mmol), dichloromethane (75 mL) and di-tert-butyldicarbonate(14.36 g, 65.7 mmol). The mixture was stirred under nitrogen and cooledto 0° C. in an ice bath. Potassium carbonate (24.37 g, 176 mmol) and18-crown-6 (0.90 g, 3.4 mmol) dissolved in dichloromethane were added.The resulting mixture was stirred and warmed to room temperatureovernight. The crude reaction mixture was filtered through a silica geland rinsed with ethyl acetate. The resulting solvent was evaporated andthe residue was purified via flash column chromatography on silica gelwith ethyl acetate: hexane (40%) as eluant. The third fraction wascombined and the solvent removed to give 15.7 g (yield: 95%) of 1 as ayellow oil. The product was characterized by ¹H NMR and MS.

Synthesis of 3-(4-t-butoxycarbonyl)phenyl-1-propyl malonate (2)

Dichloromethane (275 mL) was added to 1 (13.71 g, 54.4 mmol) in a 500 mLround bottom flask. To this was added, with stirring, pyridine (5.72 g,72.35 mmol, 1.33 equiv) and the solution was cooled to 0° C. in an icebath under nitrogen. Malonyl dichloride (2.65 mL, 27.2 mmol, indichloromethane solution) was dropwise added. The initially clearsolution became dark red upon complete addition of the malonyldichloride. The mixture was stirred and warm up to room temperatureovernight, upon which time it have become dark blue/green in color. Themixture was filtered through silica gel with ethyl acetate. The filtratewas evaporated and the residue was purified via flash columnchromatography on silica gel using ethyl acetate as eluant. Thefractions were collected and removed solvent to give 2 as yellow oil(9.56 g, 61% yield). The product was characterized by ¹H and MS.

Synthesis of [3-(4-t-butoxycarbonyl)phenyl-1-propylmalonate]-methano-[60]fullerene(3)

In a round bottom flask, [60]fullerene(1 equivalent),9,10-dimethylancethracene (22 equivalent) and toluene were added. Theresulting solution was stirred under N₂ for one hour to completelydissolve the fullerene. Carbon tetrabromide (22 equivalent) and 2 (22equiv) were added to the solution. 1,8-Diazabicyclo[5.4.0]undec-7-ene(108 equivalent) was added dropwise and the resulting mixture wasstirred at room temperature overnight and the initial purple solutionhad become a dark red color. The crude mixture was poured though silicagel with toluene to remove unreacted [60]fullerene, and then rinsed withdichloromethane: ethyl acetate:methanol (2:2:1) to remove the red/brownband containing the crude products. The solvents were evaporated and theresulting residue 3 (dark red/brown oil) was obtained and characterizedby ¹H NMR and MALDI MS. Major components in 3 is multi-adductsfullerenes (n=4 to 6).

Synthesis Example B Methanofullerene II: (3-phenol-1-propylmalonate)-methano-[60]fullerene

Synthesis of (3-phenol-1-propyl malonate)-methano-[60]fullerene (4)

In a 50 mL round bottom flask, 3 was dissolved in dichloromethane (10mL) and stirred under nitrogen. Triflic acid (0.1 mol %) was added andstirred for 4 hours. The solvent was removed under vacuum and theresulting residue 4 was obtained and characterized by ¹H NMR and MALDIMS.

Synthesis of((3-phenol-1-propyl)-(3-(4-t-butoxycarbonyl)-phenyl-1-propyl) malonate)methano-[60]fullerene

In a 50 mL round bottom flask, 3 was dissolved in dichloromethane (10mL) and stirred under nitrogen. Triflic acid (0.1 mol %) was added andstirred for 0.5 hours to partially hydrolyze the 4-t-butoxycarbonylgroups. The solvent was removed under vacuum and the resulting residue 4was obtained and characterized by ¹H NMR and MALDI MS.

Composition Example 1

Into 100 mL of propylene glycol monomethyl ether (PGME) was added 0.25 gof methanofullerene I, 0.50 g of poly[(o-cresyl glycidylether)-co-formaldehyde] and 0.25 g of triphenylsulfoniumhexafluoroantimonate and stirred for 1 hr at room temperature. Thecomposition was applied to a silicon wafer and spin coated at 500 rpmfor 5 sec followed by 2000 rpm for 60 sec. The coated wafer was thenheated on a hot plate at 75° C. for 5 min to give a film ofapproximately 25 nm. The wafer was imagewise exposed to synchrotronbased EUV light at 13-14 nm wavelength at 31.2 mJ/cm² and post exposurebaked at 90° C. for 3 min. The unexposed areas were removed by puddledevelopment in a 50:50 blend of monochlorobenzene and isopropyl alcoholfor 20 sec followed by an isopropyl alcohol rinse. FIG. 1 shows theresulting 22 nm lines and spaces for example 1.

Composition Example 2

Example 1 was repeated but 150 mL of PGME was used to reduce the solidscontent. The resulting film thickness was 18 nm and the exposure was21.2 mJ/cm². FIG. 2 shows the resulting 18 nm lines and spaces forexample 2.

Composition Example 3

Example 1 was repeated using methanofullerene II in place ofmethanofullerene I. A 48 mJ/cm² exposure dosage was used. FIG. 3 showsthe resulting 25 nm lines and spaces for example 3.

Composition Example 4

Example 1 was repeated using an E-beam exposure in place of 13-14 nmexposure. Area dose testing established a sensitivity of 90 μC/cm2 at 30keV. For high resolution patterning a line dose of 575 pC/cm was appliedat a nominal half-pitch of 50 nm, given lines of ˜20 nm with ˜30 nmspaces. FIG. 4 shows the resulting lines and spaces for example 4.

Composition Example 5

Example 3 was repeated using an E-beam exposure of 90 μC/cm² at 30 keVin place of 13-14 nm exposure. For high resolution patterning a linedose of 575 pC/cm was applied at a nominal half-pitch of 50 nm, givenlines of ˜20 nm with ˜30 nm spaces FIG. 5 shows the resulting lines andspaces for the example 5.

Composition Example 6

The formulation of Example 1 was repeated using 0.125 g ofmethanofullerene I and 0.125 g of a methanofullerene havingtetraethylene glycol esters capped with acetic acid to provide acetateesters. The composition was applied to a silicon wafer and spin coatedat 500 rpm for 5 sec followed by 2000 rpm for 60 sec. The coated waferwas then heated on a hot plate at 75° C. for 5 min to give a film ofapproximately 25 nm. The wafer was imagewise exposed to 40 μC/cm² ofE-beam radiation and post exposure baked at 90° C. for 3 min. For highresolution patterning a line dose of 600 pC/cm was applied at a nominalhalf-pitch of 50 nm, given lines of ˜20 nm with ˜30 nm spaces Theunexposed areas were removed by puddle development in a 50:50 blend ofmonochlorobenzene and isopropyl alcohol for 20 sec followed by anisopropyl alcohol rinse. FIG. 6 shows the resulting lines and spaces forexample 6.

Composition Example 7

Into 100 mL of propylene glycol monomethyl ether (PGME) was added 0.50 gof polyhydroxystyrene, 1.00 g of poly[(o-cresyl glycidylether)-co-formaldehyde] and 0.50 g of triphenylsulfoniumhexafluoroantimonate and stirred for 1 hr at room temperature. Thecomposition was applied to a silicon wafer and spin coated at 500 rpmfor 5 sec followed by 2000 rpm for 60 sec. The coated wafer was thenheated on a hot plate at 70° C. for 5 min to give a film ofapproximately 80 nm. The wafer was imagewise exposed to 30 keV E-beamand post exposure baked at 90° C. for 2 min. The unexposed areas wereremoved by puddle development in a 50:50 blend of monochlorobenzene andisopropyl alcohol for 20 sec followed by an isopropyl alcohol rinse. Aline dose of 118 pC/cm was applied, given an isolated line of ˜20 nm.FIG. 7 shows the resulting line for example 7.

Composition Example 8

Example 7 was repeated using 0.5% polyhydroxystyrene which was 95.5%protected with t-BOC in place of the polyhydroxystyrene. A line dose of118 pC/cm was applied, giving an isolated line of ˜22 nm. FIG. 8 showsthe resulting line for example 8.

Composition Example 9

Into 100 mL of ethyl lactate was added 0.25 g of polyhydroxystyrene,0.50 g of poly[(o-cresyl glycidyl ether)-co-formaldehyde] and 0.25 g oftriphenylsulfonium hexafluoroantimonate and stirred for 1 hr at roomtemperature. The composition was applied to a silicon wafer and spincoated at 500 rpm for 5 sec followed by 1200 rpm for 80 sec. The coatedwafer was then heated on a hot plate at 70° C. for 5 min to give a filmof approximately 30 nm. The wafer was imagewise exposed to 30 keV E-beamand post exposure baked at 110° C. for 2 min. The unexposed areas wereremoved by puddle development in a 50:50 blend of monochlorobenzene andisopropyl alcohol for 20 sec followed by an isopropyl alcohol rinse. Aline dose of 88 pC/cm was applied at a nominal half-pitch of 25 nm,given lines of ˜20 nm with ˜30 nm spaces. FIG. 9 shows the resultinglines and spaces for the example 9.

Composition Example 10

Example 9 was repeated using 0.25% polyhydroxystyrene which was 95.5%protected with t-BOC in place of the polyhydroxystyrene. A line dose of117 pC/cm was applied at a nominal half-pitch of 25 nm, giving lines of˜20 nm with ˜30 nm spaces. FIG. 10 shows the resulting lines and spacesfor the example 10.

Composition Example 11

Into 100 mL of ethyl lactate was added 0.25 g ofpoly(4-tert-butoxycarbonyloxystyrene), 0.50 g of poly[(o-cresyl glycidylether)-co-formaldehyde] and 0.25 g of triphenylsulfoniumhexafluoroantimonate and stirred for 1 hr at room temperature. Thecomposition was applied to a silicon wafer and spin coated at 4000 rpmfor 1 min and heated on a hot plate at 75° C. for 5 min to give a filmof approximately 25-30 nm. The wafer was imagewise exposed using a 20keV E-beam and post exposure baked at 160° C. for 2 min. The unexposedareas were removed by puddle development in a 50:50 blend ofmonochlorobenzene and isopropyl alcohol for 20 sec followed by anisopropyl alcohol rinse. A line dose of 9.6 μC/cm² was applied at anominal half-pitch of 30 nm, given lines of 15.9 nm.

Composition Example 12

Example 11 was repeated using an EUV exposure of 13.5 nm wavelength. Thesamples were post exposure heated at 90° C. for 3 min followed bydevelopment as in example 11. Exposure doses of sub-10 mJ/cm² providedfor pitch resolution of 44 and 36 nm with excellent line quality.

Composition Example 13

Into 100 mL of ethyl lactate was added 1.00 g ofpoly(4-tert-butoxycarbonyloxystyrene), 1.00 g ofhexamethoxymethylmelamine and 0.25 g of triphenylsulfoniumhexafluoroantimonate and stirred for 1 hr at room temperature. Thecomposition was applied to a silicon wafer and spin coated at 4000 rpmfor 1 min and heated on a hot plate at 75° C. for 5 min to give a filmof approximately 30 nm. The wafer was imagewise exposed to 30 keV E-beamand post exposure baked at 140° C. for 2 min. The unexposed areas wereremoved by puddle development in a 50:50 blend of monochlorobenzene andisopropyl alcohol for 20 sec followed by an isopropyl alcohol rinse. Aline dose of 7.8 pC/cm was applied at a nominal half-pitch of 25 nm,given lines of ˜20 nm with ˜30 nm spaces.

We claim:
 1. A two-step negative-tone photoresist compositioncomprising: a. At least one methanofullerene comprising the generalformula:

wherein x is at least 10, y is 1-6, n is 0-1, alkyl is a branched orunbranched, substituted or unsubstituted divalent alkyl chain of 1-16carbon atoms having no heteroatoms substituted into the alkyl chain,aryl is a substituted or unsubstituted divalent phenyl group, divalentheteroaromatic group, or divalent fused aromatic or fused heteroaromaticgroup, and wherein R is a photoacid labile group comprising —C═O—OR′,wherein OR′ is t-alkoxy, cycloketal, acetal, or oxy-vinyl b. at leastone crosslinking system, and c. at least one photoacid generator,wherein the photoacid labile group is capable of being removed whenexposed to a photoacid providing a functionality capable of crosslinkingwith itself and/or the crosslinking system.
 2. The photoresistcomposition of claim 1, wherein the photoacid labile group comprises atertiary alkoxycarbonyl group.
 3. The photoresist composition of claim1, wherein the at least one photoacid generator comprises an onium saltcompound, a triphenylsulfonium salt, a sulfone imide compound, ahalogen-containing compound, a sulfone compound, a sulfonate estercompound, a quinone-diazide compound, a diazomethane compound, aniodonium salt, an oxime sulfonate, or a dicarboxyimidyl sulfate.
 4. Thephotoresist composition of claim 1, wherein the at least onecrosslinking system comprises a photoacid sensitive monomer or polymer.5. The photoresist composition of claim 1, wherein the crosslinkingsystem comprises at least one of a glycidyl ether, glycidyl ester,glycidyl amine, a methoxymethyl group, an ethoxy methyl group, abutoxymethyl group, a benzyloxymethyl group, dimethylamino methyl group,diethylamino methyl group, a dibutoxymethyl group, a dimethylol aminomethyl group, diethylol amino methyl group, a dibutylol amino methylgroup, a morpholino methyl group, acetoxymethyl group, benzyloxy methylgroup, formyl group, acetyl group, vinyl group or an isopropenyl group.6. The photoresist composition of claim 1, wherein the crosslinkingsystem comprises one or more glycidyl ether groups attached to a novolacresin.
 7. The photoresist composition of claim 1, wherein the divalentalkyl chain comprises a methylene, an ethylene, a 1,2-propylene or a1,3-propylene, and wherein the divalent alkyl chain optionally comprisesfluorine atoms.
 8. A method of forming a patterned resist layer on asubstrate comprising the steps of: a. providing a substrate, b. applyingthe photoresist composition of claim 1 to a desired wet thickness, c.heating the coated substrate to form a substantially dried coating toobtain a desired thickness, d. imagewise exposing the coated substrateto actinic radiation, e. optionally heating the imagewise exposed coatedsubstrate, and f. removing the unexposed areas of the coating using anaqueous or nonaqueous developer composition to form a photoimage,wherein the remaining photoimage is optionally heated.
 9. The method ofclaim 8, wherein the photoacid labile group comprises a tertiaryalkoxycarbonyl group.
 10. The method of claim 8, wherein the at leastone photoacid generator comprises an onium salt compound, atriphenylsulfonium salt, a sulfone imide compound, a halogen-containingcompound, a sulfone compound, a sulfonate ester compound, aquinone-diazide compound, a diazomethane compound, an iodonium salt, anoxime sulfonate, or a dicarboxyimidyl sulfate.
 11. The method of claim8, wherein the at least one crosslinking system comprises a photoacidsensitive monomer or polymer.
 12. The method of claim 8, wherein the atleast one crosslinking system comprises at least one of a glycidylether, glycidyl ester, glycidyl amine, a methoxymethyl group, an ethoxymethyl group, a butoxymethyl group, a benzyloxymethyl group,dimethylamino methyl group, diethylamino methyl group, a dibutoxymethylgroup, a dimethylol amino methyl group, diethylol amino methyl group, adibutylol amino methyl group, a morpholino methyl group, acetoxymethylgroup, benzyloxy methyl group, formyl group, acetyl group, vinyl groupor an isopropenyl group.
 13. The method of claim 8, wherein the at leastone crosslinking system comprises one or more glycidyl ether groupsattached to a novolac resin.
 14. A method of forming a patterned resistlayer on a substrate comprising the steps of: a. providing a substrate,b. applying the photoresist composition of claim 1 to a desired wetthickness, c. heating the coated substrate to form a substantially driedcoating to obtain a desired thickness, d. imagewise exposing the coatedsubstrate to actinic radiation, e. optionally heating the imagewiseexposed coated substrate, and f. removing the exposed areas of thecoating using an aqueous or nonaqueous developer composition to form apatterned image, g. imagewise exposing the obtained patterned image, h.optionally heating the imagewise exposed patterned image, and removingthe unexposed areas of the image using an aqueous or nonaqueousdeveloper composition to form an image; wherein the remaining image isoptionally heated.